NTR2101P
NTR2101P is P-Channel MOSFET manufactured by onsemi.
Features
- Leading Trench Technology for Low RDS(on)
- - 1.8 V Rated for Low Voltage Gate Drive
- SOT- 23 Surface Mount for Small Footprint (3 x 3 mm)
- This is a Pb- Free Device
Applications
- High Side Load Switch
- DC- DC Conversion
- Cell Phone, Notebook, PDAs, etc.
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Symbol
Parameter
Value Unit
VDSS Drain- to- Source Voltage
- 8.0
VGS Gate- to- Source Voltage
8.0
Continuous Drain t 5 s TA = 25C
- 3.7
Current (Note
1)
TA = 70C
- 3.0
PD Power Dissipation (Note 1) t5s
0.96 W
IDM Pulsed Drain Current tp = 10 ms
- 11
TJ,
Operating Junction and Storage Temperature
- 55 to C
TSTG
Source Current (Body Diode)
-...
