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NTR4170N
Power MOSFET
30 V, 3.1 A, Single N−Channel, SOT−23
Features
• Low RDS(on) • Low Gate Charge • Low Threshold Voltage • Halide Free • This is a Pb−Free Device
Applications
• Power Converters for Portables • Battery Management • Load/Power Switch
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
VDSS 30 V
Gate−to−Source Voltage
VGS ±12 V
Continuous Drain Current (Note 1)
Steady State
2.4
t ≤ 30 s TA = 25°C
3.1
t ≤ 10 s Steady State t ≤ 30 s
TA = 85°C
ID
3.9 1.7 A 2.3
t ≤ 10 s
2.8
Power Dissipation (Note 1)
Steady State t ≤ 30 s
TA = 25°C
PD
0.48 W 0.82
t ≤ 10 s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
PD 1.25
IDM 8.
NTR4170N Datasheet
