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NTTFS4D9N04XM - N-Channel Power MOSFET

Key Features

  • Low RDS(on) to Minimize Conduction Losses.
  • Low Capacitance to Minimize Driver Losses.
  • Small Footprint (3.3 x 3.3 mm) for Compact Design.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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Full PDF Text Transcription for NTTFS4D9N04XM (Reference)

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MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 4.9 mW, 65 A NTTFS4D9N04XM Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Drive...

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(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (3.3 x 3.