NTTFS6H854N Datasheet | onsemi

MOSFET - Power, Single N-Channel 80 V, 48 A, 14.5 mW Features - Small Footprint (3.3 x 3.3 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low Capacitance to Minimize Driver Losses - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage 20 Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25C Steady TC = 100C PD Power Dissipation State TC = 25C RqJC (Notes 1, 2, 3) TC = 100C Continuous Drain Current RqJA (Notes 1, 3, 4) PD Power Dissipation RqJA (Notes 1,...