Datasheet Summary
MOSFET
- Power, Single N-Channel
80 V, 21.1 mW, 33 A
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- These Devices are Pb- Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
TC = 25°C
Current RqJC (Notes 1, 2, 3, 4)
Steady TC = 100°C
Power Dissipation
State TC = 25°C
RqJC (Notes 1, 2, 3)
TC = 100°C
Continuous Drain Current RqJA (Notes 1, 3, 4)
Power Dissipation RqJA (Notes 1, 3)
TA =...