NUS2501W6 - Integrated NPN Digital Transistor

Datasheet Summary

Features

http://onsemi. com 1 6 2 R2 R1 5.
Single SC.
88 Surface Mount Package.
Moisture Sensitivity Level 1 Benefits 3 4.
Integration of Six Discrete Components.
Integrated Solution Offers Cost and Space Savings.
Integrated Solution Improves System Reliability.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NUS2501W6
Manufacturer	ON Semiconductor
File Size	89.73 KB
Description	Integrated NPN Digital Transistor
Datasheet	NUS2501W6 Datasheet
Additional preview pages of the NUS2501W6 datasheet.

📁 Similar Datasheet

Other Datasheets by ON Semiconductor

NUS2045MN - Overvoltage Protection
NUS2401SNT1 - Integrated PNP/NPN Digital Transistors Array
NUS1204MN - Overvoltage Protection
NUS3045MN - Overvoltage Protection
NUS3046MN - Overvoltage Protection
NUS3055MUTAG - Low Profile Overvoltage Protection
NUS3116MT - Main Switch Power MOSFET and Dual Charging BJT
NUS5530MN - Integrated Power MOSFET

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT technology eliminates these individual components by integrating them into a single device, therefore integration of a single BRT with three switching diodes results in a significant reduction of both system cost and board space. This new device is offered in the SC−88 surface mount package. Features http://onsemi.

Published: Jan 17, 2007 |