NUS2501W6 Datasheet | onsemi

.. NUS2501W6 Integrated NPN Digital Transistor with Switching Diode Array This new option of integrated devices is designed to replace a discrete solution of a single transistor with three switching diodes. BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base- emitter resistor. The BRT technology eliminates these individual ponents by integrating them into a single device, therefore integration of a single BRT with three switching diodes results in a significant reduction of both system cost and board space. This new device is offered in the SC- 88 surface mount package. Features http://onsemi. 1 6 R2 R1 - Single SC- 88 Surface Mount Package - Moisture Sensitivity Level 1 Benefits - Integration of Six Discrete ponents - Integrated Solution Offers Cost and Space Savings - Integrated Solution Improves System Reliability Applications 6 6 1 SC- 88 (SOT- 363) CASE 419B 1 MARKING DIAGRAM - - - - Wireless Phones Handheld Products Notebook puters LCD Display Panels LGd MAXIMUM RATINGS (TA = 25°C unless otherwise noted.) Rating Collector- Base Voltage Collector- Emitter Voltage Collector Current Diode Reverse Voltage Diode Peak Reverse Voltage Diode Forward Current Diode Peak Forward Current Symbol VCBO VCEO IC VR VRM IF IFM Value 50 50 100 80 80 100 300 Unit Vdc Vdc m Adc Vdc Vdc m Adc m Adc LG = Specific Device Code d = Date Code ORDERING INFORMATION Device NUS2501W6T1 Package SC- 88 Shipping† 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2004 January, 2004 - Rev. P1 Publication Order Number: NUS2501W6/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise...