• Part: NVBG015N065SC1
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 309.97 KB
Download NVBG015N065SC1 Datasheet PDF
onsemi
NVBG015N065SC1
Features - Typ. RDS(on) = 12 m W @ VGS = 18 V Typ. RDS(on) = 15 m W @ VGS = 15 V - Ultra Low Gate Charge (QG(tot) = 283 n C) - Low Effective Output Capacitance (Coss = 424 p F) - 100% Avalanche Tested - AEC- Q101 Qualified and PPAP Capable - This Device is Halide Free and Ro HS pliant with exemption 7a, Pb- Free 2LI (on second level interconnection) Typical Applications - Automotive On Board Charger - Automotive DC-DC Converter for EV/HEV - Automotive Traction Inverter MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - 8/+22 V Remended Operation TC < 175°C VGSop - 5/+18 V Values of Gate- Source Voltage Continuous Drain Steady TC = 25°C Current Rq JC (Note 2) State Power Dissipation Rq JC (Note 2) 500 W Continuous Drain Current Rq JA (Notes 1, 2) Steady TC = 100°C State Power Dissipation Rq JA (Notes 1,...