• Part: NVBG025N065SC1
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 217.16 KB
Download NVBG025N065SC1 Datasheet PDF
onsemi
NVBG025N065SC1
Features - Typ. RDS(on) = 19 m W @ VGS = 18 V Typ. RDS(on) = 25 m W @ VGS = 15 V - Ultra Low Gate Charge (QG(tot) = 164 n C) - Low Output Capacitance (Coss = 278 p F) - 100% Avalanche Tested - AEC- Q101 Qualified and PPAP Capable - Ro HS pliant Typical Applications - Automotive On Board Charger - Automotive DC/DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Remended Operation Values of Gate - Source Voltage VDSS - 8/+22 V TC < 175°C VGSop - 5/+18 V Continuous Drain Current (Note 2) Steady TC = 25°C State Power Dissipation (Note 2) 395 W Continuous Drain Steady TC = 100°C Current (Notes 1, 2) State Power Dissipation (Notes 1, 2) 197...