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NVBG025N065SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @ VGS = 15 V.
  • Ultra Low Gate Charge (QG(tot) = 164 nC).
  • Low Output Capacitance (Coss = 278 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • RoHS Compliant Typical.

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Silicon Carbide (SiC) MOSFET - 19 mohm, 650 V, M2, D2PAK-7L NVBG025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ.