NVBG095N065SC1 Description
Silicon Carbide (SiC) MOSFET 70 mohm, 650 V, M2, D2PAK-7L NVBG095N065SC1.
NVBG095N065SC1 Key Features
- Typ. RDS(on) = 70 mW @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 50 nC)
- Low Output Capacitance (Coss = 89 pF)
- 100% Avalanche Tested
- AEC-Q101 Qualified and PPAP Capable
- RoHS pliant