NVH4L080N120SC1
Description
Silicon Carbide (Si C) MOSFET uses a pletely new technology that provide superior switching performance and higher reliability pared to Silicon. In addition, the low ON resistance and pact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Features
- 1200 V @ TJ = 175°C
- Max RDS(on) = 110 m W at VGS = 20 V, ID = 20 A
- High Speed Switching with Low Capacitance
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- This Device is Halide Free and Ro HS pliant with exemption 7a,
Pb- Free 2LI (on second level interconnection)
Applications
- Automotive Auxiliary Motor Drive
- Automotive On Board Charger
- Automotive DC- DC Converter for EV/HEV
DATA SHEET .onsemi.
VDSS 1200 V
RDS(ON) TYP 80 m W
ID MAX 29 A
N- CHANNEL MOSFET D
S1: Kelvin Source
S2: Power Source
S1 S2
D S2 S1 G TO- 247- 4LD CASE 340CJ
MARKING...
