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NVH4L080N120SC1 - SiC MOSFET

General Description

that provide superior switching performance and higher reliability compared to Silicon.

In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Key Features

  • 1200 V @ TJ = 175°C.
  • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A.
  • High Speed Switching with Low Capacitance.
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection).

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Full PDF Text Transcription for NVH4L080N120SC1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NVH4L080N120SC1. For precise diagrams, and layout, please refer to the original PDF.

Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, TO-247-4L NVH4L080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology that provide super...

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rbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

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