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NVH4L160N120SC1 - SiC MOSFET

Key Features

  • Typ. RDS(on) = 160 mW.
  • Ultra Low Gate Charge (QG(tot) = 34 nC).
  • High Speed Switching with Low Capacitance (Coss = 49.5 pF).
  • 100% Avalanche Tested.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
  • Free 2LI (on second level interconnection) Typical.

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.3 A Features • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.