NVH4L160N120SC1 - SiC MOSFET

Datasheet Summary

Features

Typ. RDS(on) = 160 mW.
Ultra Low Gate Charge (QG(tot) = 34 nC).
High Speed Switching with Low Capacitance (Coss = 49.5 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NVH4L160N120SC1
Manufacturer	ON Semiconductor
File Size	353.59 KB
Description	SiC MOSFET
Datasheet	NVH4L160N120SC1 Datasheet
Additional preview pages of the NVH4L160N120SC1 datasheet.

📁 Similar Datasheet

NVH820S75L4SPB - Automotive 820A Single Side Direct Cooling 6-Pack Power Module (onsemi)

Other Datasheets by ON Semiconductor

NVH4L110N65S3F - N-Channel MOSFET
NVH4L015N065SC1 - SiC MOSFET
NVH4L018N075SC1 - SiC MOSFET
NVH4L020N120SC1 - SiC MOSFET
NVH4L022N120M3S - SiC MOSFET
NVH4L025N065SC1 - N-Channel MOSFET
NVH4L027N65S3F - N-Channel MOSFET
NVH4L040N120M3S - SiC MOSFET

Full PDF Text Transcription

Click to expand full text

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 160 mohm, 1200 V, M1, TO-247-4L NVH4L160N120SC1 V(BR)DSS 1200 V RDS(ON) MAX 224 mW @ 20 V D ID MAX 17.3 A Features • Typ. RDS(on) = 160 mW • Ultra Low Gate Charge (QG(tot) = 34 nC) • High Speed Switching with Low Capacitance (Coss = 49.

Published: Jul 19, 2024 |