• Part: NVHL045N065SC1
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 301.35 KB
Download NVHL045N065SC1 Datasheet PDF
onsemi
NVHL045N065SC1
Features - Typ. RDS(on) = 32 m W @ VGS = 18 V Typ. RDS(on) = 42 m W @ VGS = 15 V - Ultra Low Gate Charge (QG(tot) = 105 n C) - High Speed Switching with Low Capacitance (Coss = 162 p F) - 100% Avalanche Tested - AEC- Q101 Qualified and PPAP Capable - This Device is Halide Free and Ro HS pliant with exemption 7a, Pb- Free 2LI (on second level interconnection) Typical Applications - Automotive On Board Charger - Automotive DC-DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage - 8/+22 V Remended Operation Values TC < 175°C VGSop - 5/+18 V of Gate- to- Source Voltage Continuous Drain Current (Note 2) Steady TC = 25°C State Power Dissipation (Note 2) 291 W Continuous Drain Steady TC = 100°C Current (Notes 1, 2) State Power Dissipation (Notes 1, 2) 145...