Full PDF Text Transcription for NVJD4158C (Reference)
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NVJD4158C. For precise diagrams, and layout, please refer to the original PDF.
NTJD4158C, NVJD4158C MOSFET – Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features • Leading 20 V Trench for Low RDS(on) Performance • ESD Protected Gate...
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• Leading 20 V Trench for Low RDS(on) Performance • ESD Protected Gate • SC−88 Package for Small Footprint (2 x 2 mm) • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • DC−DC Conversion • Load/Power Management • Load Switch • Cell Phones, MP3s, Digital Cameras, PDAs www.onsemi.com V(BR)DSS N−Ch 30 V P−Ch −20 V RDS(on) Typ 1.0 W @ 4.5 V 1.5 W @ 2.5 V 215 mW @ −4.5 V 345 mW @ −2.5 V ID Max 0.25 A −0.
NVJD4158C Datasheet
