NVLJS053N12MCL
Features
- Shielded Gate MOSFET Technology
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- Low Profile
- 0.5 mm Maximum in Micro FET 2x2 mm
- 100% UIL Tested
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
Typical Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
Gate- to- Source Voltage
Continuous Drain Current (Note 1)
VDSS
±20
TA = 25°C
Power Dissipation (Note 1)
TA = 25°C
Power Dissipation (Note 2)
TA = 25°C
0.62 W
Pulsed Drain Current (Note 3)
TA = 25°C
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to °C +175
Single Pulse Drain- to- Source Avalanche Energy (IL(pk) = 0.8 A) (Note...
