• Part: NVMFD5C478N
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 217.31 KB
Download NVMFD5C478N Datasheet PDF
onsemi
NVMFD5C478N
Features - Small Footprint (5 x 6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low Capacitance to Minimize Driver Losses - NVMFD5C478NWF - Wettable Flanks Product - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage ±20 Continuous Drain Current Rq JC (Notes 1, 2, 3, 4) TC = 25°C Steady TC = 100°C Power Dissipation State TC = 25°C Rq JC (Notes 1, 2, 3) TC = 100°C Continuous Drain Current Rq JA (Notes 1 & 3, 4) Power Dissipation Rq JA (Notes 1, 3) TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage...