NVMFD5C650NL Description
NVMFD5C650NL MOSFET Power, Dual N-Channel 60 V, 4.2 mW, 111.
NVMFD5C650NL Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFD5C650NLWF
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C + 175
- Steady State
- Steady State (Note 2) RqJA