Full PDF Text Transcription for NVMFD5C650NL (Reference)
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NVMFD5C650NL MOSFET – Power, Dual N-Channel 60 V, 4.2 mW, 111 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Q...
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for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS 60 V RDS(ON) MAX 4.2 mW @ 10 V 5.8 mW @ 4.