• Part: NVMFD5C650NL
  • Description: Dual N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 229.63 KB
Download NVMFD5C650NL Datasheet PDF
onsemi
NVMFD5C650NL
Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - NVMFD5C650NLWF - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant .onsemi. V(BR)DSS 60 V RDS(ON) MAX 4.2 m W @ 10 V 5.8 m W @ 4.5 V ID MAX 111 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage ±20 Continuous Drain Current Rq JC (Notes 1, 2, 3) Power Dissipation Rq JC (Notes 1, 2) TC = 25°C Steady TC = 100°C State TC = 25°C TC = 100°C 125 W 62 Continuous Drain Current Rq JA (Notes 1, 2, 3) Power Dissipation Rq JA (Notes 1 & 2) TA = 25°C Steady TA = 100°C State TA =...