NVMFS6H818N Overview
DATA SHEET .onsemi. MOSFET Power, Single N-Channel 80 V, 3.7 mW, 123 A NVMFS6H818N V(BR)DSS 80 V RDS(ON) MAX 3.7 mW @ 10 V ID MAX 123 A.
NVMFS6H818N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H818NWF
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C + 175
- Steady State
- Steady State (Note 2) RqJA