• Part: NVMFS6H818N
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 212.23 KB
Download NVMFS6H818N Datasheet PDF
onsemi
NVMFS6H818N
Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - NVMFS6H818NWF - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage ±20 Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C Steady TC = 100°C State TC = 25°C TC = 100°C 136 W 68 Continuous Drain Current Rq JA (Notes 1, 2, 3) Power Dissipation Rq JA (Notes 1 & 2) TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10...