• Part: NVMJST1D4N06CL
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 311.23 KB
Download NVMJST1D4N06CL Datasheet PDF
onsemi
NVMJST1D4N06CL
Features - Small Footprint (5x7 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - TCPAK57 Top Cool Package - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage ±20 Continuous Drain Current Rq JC (Notes 1, 3) Power Dissipation Rq JC (Note 1) TC = 25°C Steady TC = 100°C State TC = 25°C TC = 100°C 116 W Continuous Drain Current Rq JA (Notes 1, 2, 3) Power Dissipation Rq JA (Notes 1, 2) TA = 25°C Steady TA = 100°C State TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature...