NVMJST3D3N04C Datasheet | onsemi

MOSFET - Power, Single N-Channel 40 V, 3.3 mW, 157 A Features - Small Footprint (5x7 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - TCPAK57 5x7 Top Cool Package - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage 20 Continuous Drain Current RqJC (Notes 1, 3) Steady TC = 25C State TC = 100C Power Dissipation RqJC (Note 1) TC = 25C TC = 100C 150 W 75 Pulsed Drain Current TA = 25C,...