Datasheet4U Logo Datasheet4U.com

NVMTS0D7N06C - N-Channel Power MOSFET

Key Features

  • Small Footprint (8x8 mm) for Compact Design.
  • Low RDS(on) to Minimize Conduction Losses.
  • Low QG and Capacitance to Minimize Driver Losses.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • Wettable Flank Plated for Enhanced Optical Inspection.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Full PDF Text Transcription for NVMTS0D7N06C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NVMTS0D7N06C. For precise diagrams, and layout, please refer to the original PDF.

MOSFET - Power, Single N-Channel 60 V, 0.72 mW, 464 A NVMTS0D7N06C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Lo...

View more extracted text
m) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Steady TC = 25°C ID Current RqJC (Note 2) State TC = 100°C 464 A 328.1 Power Dissipation RqJC (Note 2) Steady TC = 25°C PD State TC = 100°C 294.6 W 147.