Full PDF Text Transcription for NVMTS0D7N06C (Reference)
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NVMTS0D7N06C. For precise diagrams, and layout, please refer to the original PDF.
MOSFET - Power, Single N-Channel 60 V, 0.72 mW, 464 A NVMTS0D7N06C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Lo...
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m) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • Wettable Flank Plated for Enhanced Optical Inspection • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Steady TC = 25°C ID Current RqJC (Note 2) State TC = 100°C 464 A 328.1 Power Dissipation RqJC (Note 2) Steady TC = 25°C PD State TC = 100°C 294.6 W 147.