Datasheet Summary
MOSFET
- Power, Single N-Channel, STD Gate, m8FL
40 V, 1.43 mW, 178 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (3.3 x 3.3 mm) for pact Design
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
Applications
- Motor Drive
- Battery Protection
- Synchronous Rectification
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current
TC = 25°C
TC = 100°C
Power Dissipation
TA = 25°C
Pulsed...