NVXK2VR80WDT2
Features
- DIP Silicon Carbide 3- Phase Bridge Power Module for On- board
Charger (OBC) for x EV Applications
- Creepage and Clearance per IEC 60664- 1, IEC 60950- 1
- pact Design for Low Total Module Resistance
- Module Serialization for Full Traceability
- Lead Free, ROHS and UL94V- 0 pliant
- Automotive Qualified per AEC- Q101 and AQG324
Typical Applications
- PFC for On- Board Charger in x EV Applications
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
+25/- 15 V
Remended Operation Values of Gate- to- Source Voltage, TJ ≤ 175°C
VGSop
+20/- 5
Continuous Drain Current (Note 1)
TC = 25°C
Power Dissipation (Note 1)
Pulsed Drain Current (Note 2) TC = 25°C tp = 100 ms
Single Pulse Surge Drain Current Capability
TC = 25°C, tp = 10 ms, RG = 4.7 W
Operating Junction Temperature
Storage Temperature
Source Current (Body Diode)
Single Pulse Drain- to- Source Avalanche Energy...
