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NXH015P120M3F1PTG - SiC Module

General Description

See detailed ordering and shipping information on page 4 of this data sheet.

Figure 1.

This document contains information on a product under development.

Key Features

  • 15 mW / 1200 V M3S SiC MOSFET Half.
  • Bridge.
  • Thermistor.
  • Options with Pre.
  • Applied Thermal Interface Material (TIM) and without Pre.
  • Applied TIM.
  • Press.
  • Fit Pins.
  • These Devices are Pb.
  • Free, Halide Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package Product Preview NXH015P120M3F1PTG The NXH015P120M3F1 is a power module containing 15 mW/ 1200 V SiC MOSFET half−bridge and a thermistor in an F1 package. Features • 15 mW / 1200 V M3S SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and without Pre−Applied TIM • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • Solar Inverter • Uninterruptible Power Supplies • Electric Vehicle Charging Stations • Industrial Power DATA SHEET www.onsemi.com PACKAGE PICTURE PIM18 33.8 x 42.