NXH350N100H4Q2F2S1G-R Description
DATA SHEET .onsemi. Si/SiC Hybrid Module EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NXH350N100H4Q2F2S1G, NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G-R This high−density, integrated power module bines.
NXH350N100H4Q2F2S1G-R Key Features
- Extremely Efficient Trench with Field Stop Technology
- Low Switching Loss Reduces System Power Dissipation
- Module Design Offers High Power Density
- Low Inductive Layout
- Low Package Height
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS