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NXH450B100H4Q2F2 - Si/SiC Hybrid Module

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General Description

symmetric boost module.

Each channel contains two 1000 V, 150 A IGBTs, two 1200 V, 30 A SiC diodes and two 1600 V, 30 A bypass diodes.

The module contains an NTC thermistor.

Overview

Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode, Q2 Package NXH450B100H4Q2F2,.

Key Features

  • Silicon/SiC Hybrid Technology Maximizes Power Density.
  • Low Switching Loss Reduces System Power Dissipation.
  • Low Inductive Layout.
  • Press.
  • fit and Solder Pin Options.
  • This Device is Pb.
  • Free, Halogen Free and is RoHS Compliant Typical.

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