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NXH800H120L7QDSG - Half-Bridge IGBT

General Description

IGBT power module.

The integrated Field Stop Trench 7 IGBTs and Gen.

7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Key Features

  • 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module.
  • Field Stop Trench 7 IGBTs & Gen.7 Diodes.
  • NTC Thermistor.
  • Isolated Base Plate.
  • Solderable Pins.
  • Low Inductive Layout.
  • This is a Pb.
  • Free Device Typical.

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Full PDF Text Transcription (Reference)

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Half-Bridge IGBT Module, Qdual3 1200 V, 800 A NXH800H120L7QDSG General Description The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module • Field Stop Trench 7 IGBTs & Gen.7 Diodes • NTC Thermistor • Isolated Base Plate • Solderable Pins • Low Inductive Layout • This is a Pb−Free Device Typical Applications • Motor Drives • Servo Drives • Solar Drives • Uninterruptible Power Supply Systems (UPS) 4 9 T1 7 5 8 D1 10/11 6 T2 D2 1 2 3 Figure 1. Schematic DATA SHEET www.onsemi.com PIM11, 152.00 x 62.15 x 20.