Datasheet4U Logo Datasheet4U.com

NXH800H120L7QDSG - Half-Bridge IGBT

Description

IGBT power module.

The integrated Field Stop Trench 7 IGBTs and Gen.

7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

Features

  • 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module.
  • Field Stop Trench 7 IGBTs & Gen.7 Diodes.
  • NTC Thermistor.
  • Isolated Base Plate.
  • Solderable Pins.
  • Low Inductive Layout.
  • This is a Pb.
  • Free Device Typical.

📥 Download Datasheet

Datasheet preview – NXH800H120L7QDSG

📁 Similar Datasheet

  • NXH3670UK - Bluetooth Low Energy transceiver (NXP)
  • NXH5104 - 4 Mbit Serial SPI EEPROM (NXP)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Half-Bridge IGBT Module, Qdual3 1200 V, 800 A NXH800H120L7QDSG General Description The NXH800H120L7QDSG is a 1200 V 800 A rated half bridge IGBT power module. The integrated Field Stop Trench 7 IGBTs and Gen. 7 diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 800 A 2 in 1 Half Bridge Configuration IGBT Power Module • Field Stop Trench 7 IGBTs & Gen.7 Diodes • NTC Thermistor • Isolated Base Plate • Solderable Pins • Low Inductive Layout • This is a Pb−Free Device Typical Applications • Motor Drives • Servo Drives • Solar Drives • Uninterruptible Power Supply Systems (UPS) 4 9 T1 7 5 8 D1 10/11 6 T2 D2 1 2 3 Figure 1. Schematic DATA SHEET www.onsemi.com PIM11, 152.00 x 62.15 x 20.
Published: |