NXH80B120H2Q0 Description
Si/SiC Hybrid Module EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high−density, integrated power module bines high−performance IGBTs with rugged anti−parallel diodes including on−board.
NXH80B120H2Q0 Key Features
- Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
- 1200 V FSII IGBT VCE(SAT) = 2.2 V
- 1200 V SiC Diode VF = 1.4 V
- Low Inductive Layout
- Solderable Pins
- Thermistor
- Bare Copper and Nickel-Plated DBC Options