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NXH80B120H2Q0 - Dual Boost Power Module

Key Features

  • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module.
  • 1200 V FSII IGBT VCE(SAT) = 2.2 V.
  • 1200 V SiC Diode VF = 1.4 V.
  • Low Inductive Layout.
  • Solderable Pins.
  • Thermistor.
  • Bare Copper and Nickel.
  • Plated DBC Options Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package NXH80B120H2Q0 The NXH80B120H2Q0 is a high−density, integrated power module combines high−performance IGBTs with rugged anti−parallel diodes including on−board thermistor. Features • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module • 1200 V FSII IGBT VCE(SAT) = 2.2 V • 1200 V SiC Diode VF = 1.