• Part: NXH80B120H2Q0
  • Description: Dual Boost Power Module
  • Manufacturer: onsemi
  • Size: 291.00 KB
Download NXH80B120H2Q0 Datasheet PDF
onsemi
NXH80B120H2Q0
NXH80B120H2Q0 is Dual Boost Power Module manufactured by onsemi.
Si/Si C Hybrid Module - Elite Si C, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A Si C Diode, Q0 Package The NXH80B120H2Q0 is a high- density, integrated power module bines high- performance IGBTs with rugged anti- parallel diodes including on- board thermistor. Features - Dual Boost 40 A / 1200 V IGBT + Si C Rectifier Hybrid Module - 1200 V FSII IGBT VCE(SAT) = 2.2 V - 1200 V Si C Diode VF = 1.4 V - Low Inductive Layout - Solderable Pins - Thermistor - Bare Copper and Nickel- Plated DBC Options Typical Applications - Solar Inverter - Uninterruptible Power Supplies - Energy Storage Systems 7, 8 D5 Bypass Diode 5,6,15,16 D3 Boost Diode D6 Bypass Diode D4 Boost Diode 13,14 9,10 11,12 T1 Boost IGBT...