NXH80T120L2Q0S2G Overview
The integrated field stop trench IGBTs and fast recovery diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.
NXH80T120L2Q0S2G Key Features
- Low Switching Loss
- Low VCESAT
- pact 65.9 mm x 32.5 mm x 12 mm Package
- Thermistor
- Options with pre-applied thermal interface material (TIM) and
- Options with solderable pins and press-fit pins