P65N02RG Overview
NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK.
P65N02RG Key Features
- Planar HD3e Process for Fast Switching Performance
- Low RDSon to Minimize Conduction Loss
- Low Ciss to Minimize Driver Loss
- Low Gate Charge
- Pb-Free Packages are Available
- Continuous
- Junction-to-Case Total Power Dissipation @ TC = 25°C Drain Current
- Continuous @ TC = 25°C, Chip Continuous @ TC =25°C, Limited by Package Single Pulse (tp = 10 ms)
- Junction-to-Ambient (Note 1)
- Continuous @ TA = 25°C