PCFF55H120SWF
Features
- Advanced Gen VII Technology
- Fast and Soft Recovery
- Maximum Junction Temperature 175°C
- Low Forward Voltage: VF = 1.78 V (Typ.) @ IF = 55 A
- Easy to Parallel Operation
Typical Applications
- Solar
- Energy storage
- Industrial motor control
MECHANICAL PARAMETERS
Parameter Die Size (w/ Scribe Lane) Anode Pad Size Scribe Lane Width Die Thickness Top Metal Back Metal Topside Passivation
Value
Unit
3,400 x 6,400 mm2
2,437 x 5,437 mm2
80 mm
119 mm
6 mm Al Si Cu
1.65 mm Ti/Ni V/Ag
Silicon Nitride plus Polyimide
Wafer Diameter
200 mm
Max Possible Die Per Wafer
Remended Storage Environment
In original container, in dry nitrogen, < 6 months at an ambient temperature of 23°C
DIE DATA SHEET .onsemi.
VR = 1200 V IF = 55 A
DIODE DIE A
DIE OUTLINE
ORDERING INFORMATION
Device PCFF55H120SWF
Inking Yes
Shipping
Sawn Wafer on Tape
© Semiconductor ponents Industries, LLC, 2022
December...
