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PCFFS10120AF - SiC Schottky Diode

General Description

Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material

Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 105 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, Die PCFFS10120AF Description Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material − Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over−voltage conditions.