PCFFS10120AF
Description
Silicon Carbide (Si C) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material
- Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over- voltage conditions.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 105 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
Die Information
- Wafer Diameter: 6 inch
- Die Size: 2,280 × 2,280 mm (Include Scribe Lane)
- Metallization
- Top: Ti / Ti N / AI 4 mm
- Back: Ti/ Ni V / Ag
- Die Thickness: Typ. 200 mm
- Bonding Pad Size
- Anode: 1700 × 1700 mm
- Remended Wire Bond (Note 1)
- Anode: 15 mil × 1
NOTE: 1. Based on TO- 247 package of onsemi
DIE DATA SHEET...
