PCFFS10120AF Description
Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material − Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over−voltage conditions.
PCFFS10120AF Key Features
- Max Junction Temperature 175°C
- Avalanche Rated 105 mJ
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery / No Forward Recovery