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PCFFS10120AF - SiC Schottky Diode

Datasheet Summary

Description

Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material

Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 105 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery / No Forward Recovery.

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Datasheet preview – PCFFS10120AF

Datasheet Details

Part number PCFFS10120AF
Manufacturer ON Semiconductor
File Size 239.70 KB
Description SiC Schottky Diode
Datasheet download datasheet PCFFS10120AF Datasheet
Additional preview pages of the PCFFS10120AF datasheet.

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Full PDF Text Transcription

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, Die PCFFS10120AF Description Silicon Carbide (SiC) Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material − Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over−voltage conditions.
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