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PCFFS2065AF - SiC Schottky Diode

General Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Key Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 95 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, Die PCFFS2065AF DIE DATA SHEET www.onsemi.com Anode Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.