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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D1, Die
PCFFS2065AF
DIE DATA SHEET www.onsemi.com
Anode
Description Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.