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PCFFS3065AF - SiC Schottky Diode

Datasheet Summary

Description

technology that provides superior switching performance and higher reliability compared to Silicon.

Features

  • Max Junction Temperature 175°C.
  • Avalanche Rated 180 mJ.
  • High Surge Current Capacity.
  • Positive Temperature Coefficient.
  • Ease of Paralleling.
  • No Reverse Recovery/No Forward Recovery.

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Datasheet preview – PCFFS3065AF

Datasheet Details

Part number PCFFS3065AF
Manufacturer ON Semiconductor
File Size 138.35 KB
Description SiC Schottky Diode
Datasheet download datasheet PCFFS3065AF Datasheet
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Full PDF Text Transcription

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, Die PCFFS3065AF DIE DATA SHEET www.onsemi.com Anode Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.
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