PCFFS3065AF
Description
Silicon Carbide (Si C) Schottky Diodes use a pletely new technology that provides superior switching performance and higher reliability pared to Silicon. No reverse recovery current, temperature dependent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
- Max Junction Temperature 175°C
- Avalanche Rated 180 m J
- High Surge Current Capacity
- Positive Temperature Coefficient
- Ease of Paralleling
- No Reverse Recovery/No Forward Recovery
Applications
- General Purpose
- SMPS, Solar Inverter, UPS
- Power Switching Circuits
For Additional Product Information and Electrical Characteristics on Package
Refer to FFSP3065A product datasheet.
Die Information
- Wafer Diameter: 6 inch
- Die Size: 2,700 × 2,700 mm
(include Scribe Lane)
- Metallization:
-...
