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PCGLA200T75NF8 - 200A Field Stop Trench IGBT

Key Features

  • AEC.
  • Q101 Rev. D Qualified for Enhanced Reliability.
  • Maximum Junction Temperature 175°C.
  • Advanced FS4 Trench Technology.
  • Positive Temperature Coefficient.
  • Easy Paralleling.
  • Short Circuit Rated.
  • Very Low Saturation Voltage: VCE(SAT) = 1.45 V(Typ. ) @ IC = 200 A.
  • Optimized for Motor Control.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIE DATA SHEET www.onsemi.com Field Stop Trench IGBT Die 750 V, 200 A PCGLA200T75NF8 VCES = 750 V IC = Limited by Tj(max) IGBT DIE Features • AEC−Q101 Rev. D Qualified for Enhanced Reliability • Maximum Junction Temperature 175°C • Advanced FS4 Trench Technology • Positive Temperature Coefficient • Easy Paralleling • Short Circuit Rated • Very Low Saturation Voltage: VCE(SAT) = 1.45 V(Typ.) @ IC = 200 A • Optimized for Motor Control Applications Applications • Automotive Traction Modules • General Power Modules DIE OUTLINE MECHANICAL PARAMETERS Parameter Mils mm Die Size 394 x 394 10,000 x 10,000 Emitter Pad Size See chip drawing See chip drawing Gate Pad Size 47 x 56 1,200 x 1,430 Scribe Lane Width 3 80 Die Thickness 3.4 86 Top Metal 5 mm AlSiCu Back Metal 1.