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PCP1103 - Bipolar Transistor

Key Features

  • Adoption of MBIT process.
  • Low collector to emitter saturation voltage.
  • High allowable power dissipation.
  • Large current capacity.
  • High speed switching.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings --30 --30 --5 --1.5 --5 Unit V.

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Datasheet Details

Part number PCP1103
Manufacturer onsemi
File Size 88.98 KB
Description Bipolar Transistor
Datasheet download datasheet PCP1103 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1346A PCP1103 Bipolar Transistor –30V, –1.5A, Low VCE(sat) PNP Single PCP http://onsemi.com Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • Adoption of MBIT process • Low collector to emitter saturation voltage • High allowable power dissipation • Large current capacity • High speed switching • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings --30 --30 --5 --1.5 --5 Unit V V V A A Continued on next page. Stresses exceeding Maximum Ratings may damage the device.