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PCRKA20065F8M1 - Extremefast Diode

Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature 175°C.
  • Extremefast Technology with Soft Recovery.
  • Low Forward Voltage (VF = 1.35 V (Typ. ) @ IF = 200 A).
  • Cathode Pad covered with Solderable Metal Layer.

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Datasheet preview – PCRKA20065F8M1

Datasheet Details

Part number PCRKA20065F8M1
Manufacturer ON Semiconductor
File Size 106.39 KB
Description Extremefast Diode
Datasheet download datasheet PCRKA20065F8M1 Datasheet
Additional preview pages of the PCRKA20065F8M1 datasheet.

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    Full PDF Text Transcription

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    Extremefast Diode with Solderable Top Metal 650 V, 200 A PCRKA20065F8M1 Features • AEC−Q101 Qualified • Maximum Junction Temperature 175°C • Extremefast Technology with Soft Recovery • Low Forward Voltage (VF = 1.35 V (Typ.) @ IF = 200 A) • Cathode Pad covered with Solderable Metal Layer Applications • Automotive Traction Modules • General Power Modules DIE DATA SHEET www.onsemi.com A C ORDERING INFORMATION Part Number Packing Die Size Anode Area Die Thickness Top Metal Back Metal Topside Passivation Wafer Diameter Max Possible Die Per Wafer PCRKA20065F8M1 Wafer (sawn on foil) mils mm 197 × 394 5,000 × 10,000 183 × 381 4,668 × 9,668 3 78 6 mm AlCu + 1.15 mm Ti/NiV/Ag (STM) 0.
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