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PN2222 - NPN Silicon Transistor

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Datasheet Details

Part number PN2222
Manufacturer onsemi
File Size 172.71 KB
Description NPN Silicon Transistor
Datasheet download datasheet PN2222 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Epitaxial Silicon Transistor General Purpose Transistor PN2222 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector−Base Voltage VCBO 60 V Collector−Emitter Voltage VCEO 30 V Emitter−Base Voltage VEBO 5 V Collector Current IC 600 mA Collector Power Dissipation PC 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. DATA SHEET www.onsemi.com 1 2 3 1. Emitter 2. Base 3.