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RHRG3040 - Hyperfast Diode

General Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Key Features

  • Hyperfast Recovery trr = 45 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C).
  • 400 V, 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number RHRG3040
Manufacturer onsemi
File Size 384.43 KB
Description Hyperfast Diode
Datasheet download datasheet RHRG3040 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Hyperfast Diode 30 A, 400 V − 600 V RHRG3040, RHRG3060 Description The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery trr = 45 ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.