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RHRG5060 - Hyperfast Diode

General Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Key Features

  • Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ).
  • Max Forward Voltage( VF = 2.1 V (@ TC = 25 °C ).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Datasheet Details

Part number RHRG5060
Manufacturer onsemi
File Size 355.75 KB
Description Hyperfast Diode
Datasheet download datasheet RHRG5060 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ) • Max Forward Voltage( VF = 2.