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RHRG75120 - Hyperfast Diode

General Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Key Features

  • Hyperfast Recovery, trr = 100 ns (@ IF = 75 A).
  • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C).
  • 1200 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Hyperfast Diode 75 A, 1200 V RHRG75120 Description The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling / clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery, trr = 100 ns (@ IF = 75 A) • Max Forward Voltage, VF = 3.