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SBS818 - Schottky Barrier Diode

Datasheet Summary

Features

  • Low switching noise.
  • Low forward voltage (IF=2.0A, VF max=0.52V).
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRRM Nonrepetitive Peak Reverse Surge Voltage VRSM Average Output Current IO Surge Forward Current Junction Temperature IFSM Tj When mounted on ceramic substrate (900mm2×0.8m.

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Datasheet preview – SBS818

Datasheet Details

Part number SBS818
Manufacturer ON Semiconductor
File Size 419.21 KB
Description Schottky Barrier Diode
Datasheet download datasheet SBS818 Datasheet
Additional preview pages of the SBS818 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA0471A SBS818 Schottky Barrier Diode 30V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode http://onsemi.com Applications • High frequency rectification (switching regulators, converters, choppers) Features • Low switching noise • Low forward voltage (IF=2.0A, VF max=0.52V) • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifications Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRRM Nonrepetitive Peak Reverse Surge Voltage VRSM Average Output Current IO Surge Forward Current Junction Temperature IFSM Tj When mounted on ceramic substrate (900mm2×0.8mm) When mounted on glass epoxy substrate (0.96mm2×0.
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