Datasheet4U Logo Datasheet4U.com

SCH1333 - P-Channel Power MOSFET

Key Features

  • 1.8V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --2 --8 0.8 150 --55 to +150 Unit V V A A W °C °C S.

📥 Download Datasheet

Datasheet Details

Part number SCH1333
Manufacturer onsemi
File Size 276.58 KB
Description P-Channel Power MOSFET
Datasheet download datasheet SCH1333 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SCH1333 P-Channel Silicon MOSFET Sanyo Semicon Device
SCH1330 P-Channel Silicon MOSFET Sanyo Semicon Device
SCH1331 P-Channel Silicon MOSFET Sanyo Semicon Device
SCH1332 P-Channel Silicon MOSFET Sanyo Semicon Device
SCH1334 P-Channel Silicon MOSFET Sanyo Semicon Device

Other Datasheets by onsemi

Part Number Description
SCH1334 P-Channel Power MOSFET
SCH1337 Power MOSFET
SCH1345 Power MOSFET
SCH1406 N-Channel Silicon MOSFET
SCH1430 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1531A SCH1333 P-Channel Power MOSFET –20V, –2A, 130mΩ, Single SCH6 http://onsemi.com Features • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --2 --8 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.