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SCH1345
Power MOSFET –20V, 49mΩ, –4.5A, Single P-Channel
This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Features • Low On-Resistance • 1.5V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance
Typical Applications • Load Switch • LCD Drive Switch
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
−20 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID −4.
SCH1345 Datasheet
