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SCH1436
Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel
This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
Features • Low On-Resistance • 4V drive • Low Capacitance • Pb-Free, Halogen Free and RoHS compliance • Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)
Typical Applications • Load Switch
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
30 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID 1.8 A
Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1%
IDP
7.
SCH1436 Datasheet
