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SCH2825 - N-Channel Power MOSFET

Datasheet Summary

Features

  • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting.
  • [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • [SBD].
  • Short reverse recovery time.
  • Low forward voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions [MOSFET] Drain to Source Voltage Gate to Source Voltage Drain Current (DC).

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Datasheet preview – SCH2825

Datasheet Details

Part number SCH2825
Manufacturer ON Semiconductor
File Size 289.14 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SCH2825 Datasheet
Additional preview pages of the SCH2825 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1006B SCH2825 N-Channel Power MOSFET 30V, 1.6A, 180mΩ, Single SCH6 with Schottky Diode http://onsemi.com Features • Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting • [MOSFET] • Low ON-resistance • Ultrahigh-speed switching • 4V drive • [SBD] • Short reverse recovery time • Low forward voltage Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions [MOSFET] Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
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