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SFT1341 - MOSFET

Key Features

  • Low On-Resistance.
  • Low Gate Charge.
  • ESD Diode-Protected Gate.
  • High Speed Switching.
  • Low Gate Drive Voltage.
  • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1444B SFT1341 Power MOSFET –40V, 112mΩ, –10A, Single P-Channel Features • Low On-Resistance • Low Gate Charge • ESD Diode-Protected Gate • High Speed Switching • Low Gate Drive Voltage • Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value –40 ±10 –10 –40 1.0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.33 125 Unit °C/W http://onsemi.