Datasheet4U Logo Datasheet4U.com

SFT1446 - MOSFET

Key Features

  • ON-resistance RDS(on)1=39mΩ(typ. ).
  • 4V drive.
  • Protection diode in.
  • Input Capacitance Ciss=750pF(typ. ).
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 20 80.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFT1446 N-Channel Silicon MOSFET Sanyo Semicon Device
SFT1440 N-Channel Silicon MOSFET Sanyo Semicon Device
SFT1443 N-Channel Silicon MOSFET Sanyo Semicon Device
SFT1445 N-Channel Silicon MOSFET Sanyo Semicon Device
SFT14 (SFT11 - SFT18) Super Fast Rectifiers Taiwan Semiconductor

Other Datasheets by onsemi

Part Number Description
SFT1440 N-Channel Power MOSFET
SFT1443 Power MOSFET
SFT1445 N-Channel Power MOSFET
SFT1423 N-Channel Power MOSFET
SFT1431 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA1742A SFT1446 N-Channel Power MOSFET 60V, 20A, 51mΩ, Single TP/TP-FA http://onsemi.com Features • ON-resistance RDS(on)1=39mΩ(typ.) • 4V drive • Protection diode in • Input Capacitance Ciss=750pF(typ.) • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 20 80 1 23 150 --55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.