SFT1458 - N-Channel Power MOSFET

onsemi

Key Features

On-resistance RDS(on)=10Ω(typ. ).
Input Capacitance Ciss=65pF(typ. ).
Protection Diode in.
10V drive.
Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C Ratings 600 ±30 1.

SFT1458 n-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	SFT1458
Manufacturer	onsemi
File Size	369.98 KB
Description	N-Channel Power MOSFET
Datasheet	SFT1458 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA2207 SFT1458 N-Channel Power MOSFET 600V, 1.0A, 13Ω, Single TP/TP-FA http://onsemi.com Features • On-resistance RDS(on)=10Ω(typ.) • Input Capacitance Ciss=65pF(typ.) • Protection Diode in • 10V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Conditions Drain to Source Voltage VDSS Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VGSS ID IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Tc=25°C Ratings 600 ±30 1 4 1 38 150 - 55 to +150 Unit V V A A W W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.