SMMBT5551L Datasheet | onsemi

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features http://onsemi. COLLECTOR 3 1 BASE 2 EMITTER - AEC- Q101 Qualified and PPAP Capable - S Prefix for Automotive and Other Applications Requiring Unique - Site and Control Change Requirements These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS Rating Collector - Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc 1 Vdc 2 SOT- 23 (TO- 236) CASE 318 STYLE 6 3 MARKING DIAGRAM Collector - Base Voltage VCBO x1x M G G 1 Emitter - Base Voltage Collector Current - Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc m Adc V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction- to- Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction- to- Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code- G = Pb- Free Package (Note: Microdot may be in either location) - Date Code orientation and/or overbar may vary depending upon manufacturing location. Rq JA PD ORDERING INFORMATION Device MMBT5550LT1G MMBT5551LT1G SMMBT5551LT1G MMBT5551LT1G SMMBT5551LT3G Package SOT- 23 (Pb- Free) SOT- 23 (Pb- Free) SOT- 23 (Pb- Free) SOT- 23 (Pb- Free) SOT- 23 (Pb- Free) Shipping† 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000/Tape & Reel 3,000 / Tape & Reel 10,000/Tape & Reel Rq JA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. FR- 5 = 1.0 0.75...