SNXH600B100H4Q2F2S1G-S Datasheet | onsemi

Si/Si C Hybrid Module - Elite Si C, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A Si C Diode, Q2 Package NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G-S The NXH600B100H4Q2S1G is a Si/Si C Hybrid three channel flying capacitor boost module. Each channel contains two 1000 V, 200 A IGBTs, and two 1200 V, 60 A Si C diodes. The module contains an NTC thermistor. Features - 3- channel Boost in Q2 Package - Extremely Efficient Trench with Field Stop Technology - Low Switching Loss Reduces System Power Dissipation - Module Design Offers High Power Density - Low Inductive Layout Typical Applications - Solar Inverters - Uninterruptible Power Supplies Systems DATA SHEET .onsemi. PIM56, 93x47 (SOLDER PIN) CASE 180BK MARKING DIAGRAM NXH600B100H4Q2F2S1G ATYYWW NXH600B100H4Q2F2S1G = Specific Device Code G = Pb- Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 1. NXH600B100H4Q2F2S1G Schematic Diagram © Semiconductor ponents Industries, LLC, 2022 March, 2023 - Rev. 1 Publication Order Number: NXH600B100H4Q2F2S1G/D NXH600B100H4Q2F2S1G, SNXH600B100H4Q2F2S1G- S Table 1....